JEP160A 電子固態(tài)晶圓、芯片和器件的長期存儲指南

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JEDECPUBLICATION

Long-TermStorageforElectronicSolid-StateWafers,Dice,andDevices

JEP160A

(RevisionofJEP160,November2011)

AUGUST2022

JEDECSOLIDSTATETECHNOLOGYASSOCIATION

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JEDECPublicationNo.160A

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LONG-TERMSTORAGEGUIDELINESFORELECTRONICSOLID-STATEWAFERS,DICE,ANDDEVICES

Introduction

Agedoesnotadverselyaffectsolid-stateelectricalperformanceprovidednodegradationinmaterialsoccurs.Thispublicationprovidestheindustrywiththebestpracticesandrecommendationsforpackingandstoringsolid-stateelectronicsforlong-termstorage(LTS).

Forthepurposesofthisdocument,LTSisdefinedascontinuousstoragewhereJ-STD-033doesnotapply.

-i-

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LONG-TERMSTORAGEGUIDELINESFORELECTRONICSOLID-STATEWAFERS,DICE,ANDDEVICES

(FromJEDECBoardBallotJCB-22-36,formulatedunderthecognizanceoftheJC-14.3SubcommitteeonSiliconDevicesReliabilityQualificationandMonitoring.)

Scope

ThispublicationexaminestheLTSrequirementsofwafers,dice,andpackagedsolid-statedevices.(Note:Packagingmayincludeencapsulation,under-fill,over-mold,orothertechniquestoattachadietothenextlevelofassembly.)Theusershouldevaluateandchoosethebestpracticestoensuretheirproductwillmaintainas-receiveddeviceintegrityandminimizeage-andstorage-relateddegradationeffects.Majordegradationconcernscanbedrivenbymoisture-inducedcorrosion,contamination,electrostaticfields,temperatureeffects,andoutgassing.PleaserefertoJ-STD-033fornon-LTScriteriaaswellasrequirementsformoisturesensitivitylevels,environmentalconditions,drybagrequirements,handling,shipping,anddesiccantcalculations.

WafersanddicethatareinprocessorfinishedmayrequireLTSdependinguponprogramneeds.Environmentalfactorsshouldbeevaluatedtoavoidelectrostaticdischarge(ESD)damageandtoprotectthewaferanddiebondpadsandthedeviceterminalleadsagainstcorrosionanddamageuntilanydieispackagedorotherwiseattachedinitsnextlevelofassembly.SpecificESDrequirementsandprocedurescanbefoundinANSI/ESDS20.20,EOS/ESDS8.1,andJESD625asapplicable.

Solid-statedevicesmaybeconstructedfromeitherorganicorceramicmaterials.Manyorganicpackagedsolid-statedevicesaredesignedtoattachthesemiconductordietocopperdiebondpadsorheatspreadersorstiffeners.Thesepackagesutilizeorganicresinsandothercarbon-basedmaterialswhichcanabsorbandretainmoisture,leadingtofailuremechanismssuchasdelamination,corrosion,andwarpage.

Ceramicsolid-statedevicesareconstructedfrominorganicmaterialssuchasaluminaorglassfrit.Ceramicdevicescandevelopcorrosionfrommoistureexposure.Ceramicdevicescanbedamagedfromhandling.

Effectiveuseofthispublicationisintendedtopreventenvironmentaldamagetoandmaintainreliabilityofwafers,diceandunassembledsolid-statedevicesduringLTS.ProductdestinedforLTSshouldbefreefromanyinitialstorageconcerns,includingcontaminationfromprocesschemicals,fluxes,handlingdamage,etc.LTSproductshouldbeinspectedpriortousetoensurenodetrimentaleffects.Metallicwhiskers(suchastin,silver,copper)coulddevelopdependinguponmoistureandtemperatureenvironmentalconditions.Thisdocumentdoesnotrelievethesupplieroftheresponsibilitytomeetinternalorcustomerspecifiedrequirementsorqualificationprograms.

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TermsandDefinitions

criticalmoisturelimit:Themaximumsafeequilibriummoisturecontentforaspecificencapsulateddeviceatreflowassemblyorrework.

interleveldielectric(ILD):Thedielectricmaterialusedtoelectricallyseparatecloselyspacedinterconnectlinesarrangedinseverallevels(multilevelmetallization)inanadvancedintegratedcircuit

long-termstorage(LTS):UninterruptedstoragewheretheconditionsandrequirementsofJ-STD-033donototherwiseapply;e.g.,safestorage,shelflife,floorlife.

NOTEAllowablestoragedurationswillvarybyformfactor(e.g.,packingmaterials,shape)andstorageconditions.Ingeneral,long-termstorageisgreaterthanoneyear.

LTSpackagedhardware:Thewafers,dice,orencapsulateddevicesthathaveadditionalpackagingforstoragetoprotectfrommoistureandmechanicalimpactandforeaseofidentificationandhandling.

LTSstoreroom:Anareacontainingwafers,dice,orpackageddevicesthathaveadditionalpackagingforstoragetoprotectfrommoistureorfrommechanicalimpactorforeaseofidentificationorhandling.

moisture-sensitivedevice(MSD):Anydevicethatexhibitsmoistureabsorptionormoistureretentionandwhosequalityorreliabilityisaffectedbymoisture.

next-levelassembly:Theattachmentofadieorpackageddevicetothenextlevelofassemblypackaging.

printedcircuitboard(PCB):Asubstrateusedtomechanicallysupportandelectricallyconnect

electroniccomponents

using

conductive

pathwaysorsignaltracesbyprintingoretchingtracksofaconductorsuchascopperononeorbothsidesofaninsulatingsubstrate.

NOTEAPCBisalsocalledaprintedwiringboard(PWB)oretchedwiringboard.

under-bumpmetallization(UBM):Apatterned,thin-filmstackofmaterialthatprovides1)anelectricalconnectionfromthesilicondietoasolderbump;2)abarrierfunctiontolimitunwanteddiffusionfromthebumptothesilicondie;and3)amechanicalinterconnectionofthesolderbumptothediethroughadhesiontothediepassivationandattachmenttoasolderbumppad.

under-bumpmetallurgy(UBM):Themetallayerslocatedbetweenthesolderbumpandthedie.

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ReferencesandOtherUsefulResources

IPC1/JEDEC2

IPC-T-50,TermsandDefinitionsforInterconnectingandPackagingElectronicCircuits.

JESD88,DictionaryofTermsforSolidStateTechnology.

IPC/JEDECJ-STD-033,Handling,Packing,ShippingandUseofMoisture/ReflowSensitiveSurfaceMountDevices.

JESD201,EnvironmentalAcceptanceRequirementsforTinWhiskerSusceptibilityofTinandTinAlloySurfaceFinishes.

JESD625,RequirementsforHandlingElectrostaticDischargeSensitive(ESD)Devices.

IPC/JEDECJ-STD-020,Moisture/ReflowSensitivityClassificationforNonhermeticSolidStateSurfaceMountDevices.

IPC-1601,PrintedBoardHandlingandStorageGuidelines.

JESD22-B118,SemiconductorWaferandDieBacksideExternalVisualInspection.

JESD22-B116,WireBondShearTestMethod.

J-STD-002,SolderabilityTestsforComponentLeads,Terminations,Lugs,TerminalsandWires.

JEP122,FailureMechanismsandModelsforSemiconductorDevices.

ANSI3

ANSI/ESDS20.20,ProtectionofElectricalandElectronicParts,AssembliesandEquipment(ExcludingElectricallyInitiatedExplosiveDevices).

ANSI/ESDSTM11.11SurfaceResistanceMeasurementofStaticDissipativePlanarMaterials.ANSI/ESDSTM11.12VolumeResistanceMeasurementofStaticDissipativePlanarMaterials.ANSI/ESDSTM11.13Two-PointResistanceMeasurementofStaticDissipativeMaterials

ElectrostaticDischargeAssociation(ESD)4

EOS/ESDS8.1,ProtectionofElectrostaticDischargeSusceptibleItems-Symbols-ESDAwareness.

MilitaryStandards5

MIL-PRF-81705,PerformanceSpecificationBarrierMaterials,Flexible,ElectrostaticProtective.MIL-PRF-131H,BarrierMaterials.

ISO6

ISO14644,CleanroomsandAssociatedControlledEnvironments.

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ASTM7

ASTMD3330,StandardTestMethodforPeelAdhesionofPressure-SensitiveTape.

.

/Programs/MilSpec

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LTSControl

Thefollowingrecommendationsarebestpracticeswhenstoringwafers,dice,orsolid-statedevices.Thisguidelinedoesnotprecludetheuseofspecializedtoolsorequipmentoralternativestoragepractices(e.g.,useofmoistureregulators,electrostaticdischargeprotectionsystems,etc.)forLTScontrol.AlternativepracticesshouldbeevaluatedanddocumentedtoensureconformancetoproductrequirementsandLTScriteria.

Materials

Packingmaterialsthatdeterioratewithageshouldnotbeusedsinceoutgassingofchemicalsanddecompositionproductscouldcontaminatetheproduct.UseofspecificmaterialsforLTSshouldbeidentifiedandutilized(e.g.,closed-cellfoamswithnitrogenfilling).

MoistureBarrierBag(MBB)

RefertoJ-STD-033.UtilizationofMBBsforLTSisnotlimitedtoMSDhardware.TheuseofMBBsisgoodpracticefordeviceprotectionduringLTS.Drypackinghasafiniteeffectivelifeformoistureprotectionduetothelimitedabsorptioncapabilityofthedesiccantandmoisturepenetrationthroughthepackingmaterial.

Desiccant

RefertoJ-STD-033.

NOTEIfastorageconditionotherthan38°C/90%RHisutilized,recalculationoftheWVTRisrecommended.Thedrivingforceformoisturetopenetratethebagisthewatervaporpressuredifferentialbetweeninsideandoutsidethebag.ConsidertheinsideoftheMBBat0mbar.Thembaroutsidethebagisdependentontemperatureandhumidity.TheWVTRisalinearfunctionofthewatervaporpressuredifferential;thereforerecalculatetheeffectiveWVTR.

EXAMPLE:

Thewatervaporpressureat38°C/90%RHis60mbar;at25°C/80%RH,itis25mbar.IftheWVTRis0.002g(100sqinch*day)at38°C/90%RH,itwillbe0.002/60*25=0.0008g(100sqinch*day)atstoragecondition25°C/80%RH.

HumidityIndicatorCard(HIC)

RefertoJ-STD-033.AssuranceshouldbemadethatthereisnodegradationinHICperformanceduringLTS.

DryNitrogenAtmosphere

Nitrogenenvironmentsof5%RHorlessshallbeinaccordancewithMIL-PRF-27401,Type1Gas,GradeC(99.995%).TheuseofotheratmosphericconditionsshouldbeevaluatedtoensureperformancetoLTSrequirements.

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4.1 Materials(cont’d)

HighpuritydryairAtmosphere

Maximum5%RH,0.04%CO2,0.001%Cl2,0.001%S,0.001%P.TheuseofotheratmosphericconditionsshouldbeevaluatedtoensureperformancetoLTSrequirements.

StorageContainers

Materialusedincontactwithorincloseproximitytothewafer,die,ordevicesurfacemustpreserveproductintegrity.Thecontainershouldprovideprotectionfromcontamination,abrasion,andoutgassing.WhenESDconcernsarewarranted,propermaterialsandproceduresshouldbeused.

Foams,PackingMaterialandProtectiveCushioning

Ifused,materialforLTSshouldnotcontaminatecontents.Nitrogen-filled,closedcellfoamisanexampleofasuitablematerialforLTS.Ifusingacarbon-filledvariantofthistypeoffoam,takecaretoensurethatthecarbonisfixedinthematerialandcannotshedparticlesduringLTS.ThepackingmaterialshouldbeabletomeettheLTSlife.Inparticular,anypackingitemthatcouldgiverisetochemicalorparticulatecontaminationbylong-termdegradationshouldbeavoided.Paperusedtoseparateproduct(e.g.,Tyvek?,etc.)shouldbecontaminantfreeandmeetapplicationESDrequirements.Materialscoatedwithfilmstoreducestaticcharge(i.e.,ESD-coated)shouldbeevaluatedforoutgassingconcerns.BarriermaterialsasdefinedbyMIL-PRF-131shouldbetestedtoconfirmLTSperformanceisacceptable.

GeneralStorageEnvironment

ThestorageenvironmentforLTSpackagedproductsshouldbecontrolledtominimizevibrationsandproducthandling.Temperaturecontrolisimportanttoprovideprotectionfrommaterialdecompositionandwarpagemechanisms.Itisimportanttopreventrapidtemperaturechangesthatcouldcausemoisturecondensationbaseduponthesaturatedvaporpressureofwaterinthecontainerorthermalshockfailuremechanisms.Temperaturerampratesshouldbecontrolledsotheproductmaintainsathermalequilibriumtopreventthermalshockormoisturecondensation.HumiditycontrolisimportantasMBBintegrityisdirectlyrelatedtothehumidityexposure.MaximumstoragetimedependinguponHICresponsecanbecalculatedusingtheWaterVaporTransmissionRate(WVTR)asdefinedinJ-STD-020.

Generalwarehousetemperatureandhumiditystorageenvironmentsshouldbeevaluatedforwafer,die,anddeviceLTSconcerns.Typicalwarehousetemperaturesarelessthan40°C.Typicalwarehousehumidityislessthan90%RH.Considerationshouldbemadewiththestoragematerialstoreducethelikelihoodofoutgassing.OutgassingcanberelatedtotemperatureexposureoftheLTSmaterial(includingfoams,trays,gaskets,insulators,topicalantistats,etc.),thusevaluationofmaximumstoragetemperaturesshouldbeperformed.ProductexposedtotheenvironmentoutsideofLTSpackagingshouldfollowJ-STD-033forstorage.Typicaltemperaturerangesforwafers,dice,andmodulesnotinLTSare20°Cto35°C(68°Fto95°F).Typicalhumidityis40%to60%RH.WafersanddieremovedfromLTSforprocessingshouldalsofollowtherequirementsfoundinISO14644whereapplicable.

Anytemperatureorhumidityexcursionoutsidetheselimitsshouldberecordedandlogged.Non-conformingconditionsshouldbeidentified,evaluated,andmodifiedbyappropriatecorrectiveactions.

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LTSMethods

LTSisdesignedtopreventproductdegradationduetooxygen,moisture,and/oroutgassingmechanisms.TheLTSprotectionmethodemployeddependsuponthemechanismofconcern.Whenconsideringmultiplemechanisms,onemayneedacombinationofpreventionmethods.

DryCabinetStorage

Productstoredinadrycabinetshouldbemaintainedat7-10%RHforMSL2or3andmaximum5%RHforMSL4or5unlessdeviceapplicationrequirementsorotherspecificationindicateadifferentminimumRHvalue.RefertoJ-STD-020formoistureclassificationlevels,floorliferequirements,andreflowlimitationspriortouse.Atmosphereshouldbehighpuritydryair,drynitrogen,oranyotherdryinertgasatmosphereasrequiredbythesupplier.Thepressureshouldbesufficientlyhightopreventtheingressofexternalatmospherecontaminates.

HumidityControlledStorage

Thecabinetsshouldbecapableofrecoveringtotheirstatedhumidityratingwithinonehourfromroutineexcursionssuchasadoorbeingopenedandclosed.Tolimitpossiblemoistureexposurefromambientatmosphere,thesuggestedtimelimitfordrycabinetopendooris10minutescumulativeper8hoursforatotalof30minutescumulativeper24hourperiod.Thesuggestedmaximumtimethedoormaybeopeninanyperiodis8minutestoallowthehumiditytorecovertobelow25%RH.

Oxygen(O2)ControlledStorage

Therecommendedatmosphereisdrynitrogenoranyotherdryinertgasatmosphere.Thepressureshouldbesufficientlyhightopreventtheingressofexternalatmospherecontaminants.Foroxygenexposure,aninlinemonitororotherdetectionmethodsshouldbeemployed.

Outgassing-ControlledStorage

Atmosphereshallbehighpuritydryair,drynitrogen,oranyotherdryinertgasatmosphereasrequiredbythesupplier.Thepressureshouldbesufficientlyhightopreventtheingressofexternalatmospherecontaminants.Thecabinetshouldhaveanatmosphericexchangeratesufficienttopreventinternalatmosphericcontamination.

VacuumMBBStorage

VacuumMBBiscommonlyusedforshippingandstoringwafers,dice,anddevices.TheuseofvacuumMBBforLTSrequiresconfirmationthattheproductismaintainedatanacceptablemoisturelevel.ThemostcommonmethodtoidentifymoistureexposureintheMBBistoincludeaHIC.TheuseofHICsinMBBsforwafersand/ordicestorageisoptionalduetopotentialcontaminationconcerns.UsersshoulddetermineifHICusewithwafersand/ordiceareacceptable.Careshouldbeexercisedontheforceofvacuumappliedtoensureproductandpackageintegrity.Vacuumforcecancreatedamageonpackingmaterials;assuch,theappropriatevacuumforceshouldbeidentifiedandensured.AvisualcheckshouldbeperformedtoverifytheMBBsealedconditionspriortouse.

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VacuumMBBStorage(cont’d)

HumidityControlledStorage

TheuseofvacuumMBBforLTSrequiresconfirmationthattheHICdisplaysacceptablemoisturelevelexposurepriortousingcontents.

Oxygen(O2)ControlledStorage

FlushtheMBBwithdrynitrogenoranyotherdryinertgastoensureambientatmosphereistotallyremoved.Vacuumisappliedimmediatelyaftertheflush.Anoxygensensororotherdetectionmethodsshouldbeemployedtoensurecomplianceismet.

OutgassingControlledStorage

FlushtheMBBwithnitrogen,dryair,oranyotherdryinertgastoensureambientatmosphereistotallyremoved.Vacuumisappliedimmediatelyaftertheflush.

Nitrogen(N2)FlushorPositive-PressureMBBStorage

WhenutilizinganMBBforLTS,oneshouldevaluateifapositivepressuresystemisrequired.InthissystemtheMBBinitiallyundergoesavacuumfollowedbybackfillwithdrynitrogen,dryair,oranyotherdryinertgas.TheuseofnitrogenflushpriortosealingtheMBBcreatesaninertatmospherethatenhancesproductstorage.PositivepressuresealingprovideseasyconfirmationthattheMBBisintactbyobservingbaginflation.However,oneshouldensureprotectionfrombagpuncturesandverificationthatenvironmentalinfluences(suchasairtransport)donotaffecttheintegrityoftheinflatedbag.

HumidityControlledStorage

TheuseofpositivepressureMBBforLTSrequiresconfirmationthattheHICdisplaysacceptablemoisturelevelexposurepriortousingcontents.

Oxygen(O2)ControlledStorage

TheMBBinitiallyundergoesavacuumfollowedbyback-fillwithdrynitrogenoranyotherdryinertgas.Anoxygensensororotherdetectionmethodsshouldbeemployedtoensurecomplianceismet.

OutgassingControlledStorage

TheMBBinitiallyundergoesavacuumfollowedbyback-fillwithdrynitrogen,dryair,oranyotherdryinertgas.

LTSDoubleContainmentRedundancy

OptionalredundancyinLTScapabilitymaybepossiblebyusingdoublecontainment.ExamplesofdoublecontainmentareplacingtheoriginalMBBwithinanotherMBB,orbystoringtheoriginalMBBwithinaLTScabinetcontainingappropriateenvironmentalconditions.

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StorageDetails

TheverificationtestingdetailscanbefoundinClauses5and6undertheappropriatesections.

Wafer

ExposureConcern

LTS

PackagingMethod

LTS

Verification

Environment/Specifications

StorageTimeLimitation

Preconditions

ContentsVerificationTesting

Moisture

MBB,HIC

whenacceptable

HIC(whenacceptable);MBBsealintegrity

See4.3.2and

4.3.3

BasedonHICresultswhereapplicable;verificationtestingresults

NA

Inspection1;Bondability(Wire)2;Solderability(C4Solder)3

Moisture

DryCabinet

AtmosphereFlowMeter

See4.3.1

verificationtestingresults

NA

Asabove

Oxygen

N2orInertGasDryCabinet

GasFlowMeter;ppmO2detection;O2sensors;

See4.3.1

verificationtestingresults

NA

Asabove

Oxygen

MBB

withoutair

O2sensors;MBBsealintegrity

See4.3.2and

4.3.3

verificationtestingresults

NA

Asabove

Outgassing

N2,InertGas,orAirDryCabinet

GasFlowMeter

See4.3.1

verificationtestingresults

NA

Asabove

Outgassing

MBB

MBBsealintegrity

See4.3.2

NA

NA

Asabove

NOTE1 SuchasJESD22-B118forbacksideorotherapplicableinspectionsNOTE2 SuchasJESD22-B116orotherapplicabletesting

NOTE3 SuchasJ-STD-002orotherapplicabletesting

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4.5 StorageDetails(cont’d)

Die

ExposureConcern

LTS

PackagingMethod

LTS

Verification

Environment/Specifications

StorageTimeLimitation

Preconditions

ContentsVerificationTesting

Moisture

MBB;HIC

whenacceptable;NOTE2

HIC(whenacceptable);MBBsealintegrity

See4.3.2and

4.3.3

BasedonHICresultswhereapplicable;verificationtestingresults

NA

Inspection1;Bondability(Wire)2;Solderability(C4Solder)3;Underfill/AdhesiveIntegrity4

Moisture

DryCabinet

AtmosphereFlowMeter

See4.3.1

verificationtestingresults

NA

Asabove

Oxygen

N2orInertGasDryCabinet

GasFlowMeter;ppmO2detection;O2sensors;

See4.3.1

verificationtestingresults

NA

Inspection1;Bondability(Wire)2;

Solderability(C4Solder)3

Oxygen

MBB

withoutair

O2sensors;MBBsealintegrity

See4.3.2and

4.3.3

verificationtestingresults

NA

Asabove

Outgassing

N2,InertGas,orAirDryCabinet

GasFlowMeter

See4.3.1

verificationtestingresults

NA

Inspection1;Bondability(Wire)2;

Solderability(C4Solder)3;Underfill/AdhesiveIntegrity4

Outgassing

MBB

MBBsealintegrity

See4.3.2and

4.3.3

verificationtestingresults

NA

Asabove

NOTE1 SuchasJESD22-B118(forbacksideinspection)orotherapplicableinspectionsNOTE2 SuchasJESD22-B116orotherapplicabletesting

NOTE3 SuchasJ-STD-002orotherapplicabletesting

NOTE4 Verificationofunderfillencapsulateordieattachadhesiveintegrityincludesexaminationfordelamination,voiding,poorfillets,etc.

NOTE5 TheuseofdessicantmayberequiredforpolymerbasedILDorpassivationlayers;thisshouldbeevaluatedfortheproductanddefinedbytheproductrequirements.

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StorageDetails(cont’d)

Device

ExposureConcern

LTS

PackagingMethod

LTS

Verification

Environment/Specifications

StorageTimeLimitation

Preconditions

ContentsVerificationTesting

Moisture

MBBwithdesiccant,HIC

HIC;MBB

sealintegrity

See4.3.2and

4.3.3

BasedonHICresults;verificationtestingresults

BakeoutifrequiredperJ-STD-033

Inspection1;

Solderability(solderleads)

2

Moisture

DryCabinet

AtmosphereFlowMeter

See4.3.1

verificationtestingresults

BakeoutifrequiredperJ-STD-033

Asabove

Oxygen

N2orInertGasDryCabinet

GasFlowMeter;ppmO2detection;O2sensors;

See4.3.1

verificationtestingresults

NA

Asabove

Oxygen

MBB

O2sensors;MBBsealintegrity

See4.3.2and

4.3.3

verificationtestingresults

NA

Asabove

Outgassing

N2,InertGas,orAirDryCabinet

GasFlowMeter

See4.3.1

verificationtestingresults

NA

Asabove

Outgassing

MBB

MBBsealintegrity

See4.3.2and

4.3.3

verificationtestingresults

NA

Asabove

NOTE1 SuchasJESD22-B118(forbacksideinspection)orotherapplicableinspectionsNOTE2 SuchasJ-STD-002orotherapplicabletesting

StorageConsiderationsforDevicesafterCard(orOther)Attachment

Onceadeviceisattached(i.e.,nolongerastandaloneentity),recommendedstorageconditionsarestillnotunlimited.Theprimaryownerforhigherlevelassemblies(assembledcards,systems,etc.)intowhichastandalonedevicehasbeenintegratedbysomeattachmentprocessshoulddeploystoragecontrolswhichcomprehendcontinuingriskstoallcomponentsofthosehigher-levelassemblies.Intheabsenceofacomprehensivecontrolstrategyforhigherlevelassemblies,thesamestorageprotectionsrecommendedforstandalonedeviceswillalsoprotectthosedevicesafterintegrationintohigher-levelassemblies.

NOTEOtherstorageconsiderationsmayexistforthenon-deviceconstituentsofthehigher-levelassemblyalso.Foradditionalinformationonprintedboardassemblies,pleaseseeIPC-1601PrintedBoardHandlingandStorageGuidelines.

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Handling

IfanycomponentisremovedfromLTSandisexposedtotheambientatmosphere,itshallbehandledinaccordancewithJ-STD-033formoisturesensitivity,ISO14644forwafersanddieincontrolledenvironments,andANSI/ESDS20.20/EOS/ESDS8.1,and/orJESD625forESDifrequired.Unlessotherwiseallowedbythemanuf