光刻機結(jié)構(gòu)與工作基本原理

1、光刻機結(jié)構(gòu)與工作基本原理講授內(nèi)容 第一講：微電子制造工藝流程（回顧） 第二講：微電子制造裝備概述光刻工藝及基本原理 第三講：光刻機結(jié)構(gòu)及工作原理(1) 第四講：光刻機結(jié)構(gòu)及工作原理(2)上講內(nèi)容：完整的IC制造工藝流程上講內(nèi)容：微電子制造裝備概述加法工藝減法工藝圖形轉(zhuǎn)移工藝輔助工藝摻雜擴散離子注入薄膜氧化化學氣相淀積濺射外延刻蝕濕法刻蝕干法刻蝕拋光及清洗化學機械平坦化清洗圖形轉(zhuǎn)移光刻測試及封裝測試封裝后道工藝擴散爐離子注入機退火爐氧化爐CVD反應爐濺射鍍膜機外延設(shè)備濕法刻蝕機反應離子刻蝕機光刻機涂膠顯影設(shè)備CMP拋光機硅片清洗機測試設(shè)備劃片機鍵合機上講內(nèi)容：光刻工藝流程 光刻工藝的8個基本步驟

2、氣相成底膜旋轉(zhuǎn)涂膠軟烘對準和曝光曝光后烘焙顯影堅膜烘焙顯影檢查上講內(nèi)容：光刻與光刻機 對準和曝光在光刻機(Lithography Tool)內(nèi)進行。 其它工藝在涂膠顯影機(Track)上進行。本講內(nèi)容：光刻機結(jié)構(gòu)及工作原理 光刻機簡介 光刻機結(jié)構(gòu)及工作原理光刻機簡介* 微電子裝備微電子裝備 芯片設(shè)計能力芯片設(shè)計能力 芯片制造與制造設(shè)備芯片制造與制造設(shè)備 芯片測試與測試設(shè)備芯片測試與測試設(shè)備 設(shè)備是信息產(chǎn)業(yè)的源頭：設(shè)備是信息產(chǎn)業(yè)的源頭： 我們開發(fā)設(shè)備、設(shè)備制造芯片、芯片構(gòu)成器件、器件改變世界！光刻機簡介* 摩爾定律摩爾定律Intel 創(chuàng)始人之一摩爾1964年提出，大約每隔12個月：1). 芯片能

3、力增加一倍、芯片價格降低一倍；2). 廣大用戶的福音、行業(yè)人員的噩夢。芯片集成密度不斷提升、光刻分辨率的不斷提升！* 2006國際半導體技術(shù)路線圖國際半導體技術(shù)路線圖(ITRS)原理研究原理研究樣機研發(fā)樣機研發(fā)產(chǎn)品量產(chǎn)產(chǎn)品量產(chǎn)持續(xù)改進持續(xù)改進光刻機簡介* 光刻機的作用光刻機的作用光刻機是微電子裝備的龍頭光刻機是微電子裝備的龍頭技術(shù)難度最高單臺成本最大決定集成密度光刻機是源頭中的龍頭！光刻機簡介光刻工藝流程光刻機簡介Lithography = Transfer the pattern of circuitry from a mask onto a wafer.* 對準曝光工作流程對準曝光工作流程

4、光刻機簡介光刻機簡介光刻機簡介Development of lithography system* 光刻機發(fā)展路線圖光刻機發(fā)展路線圖1光刻機簡介* 光刻機發(fā)展路線圖光刻機發(fā)展路線圖2光刻機簡介光刻機三巨頭光刻機簡介光刻機原理 Reticle (Mask) Wafer Light Lens PhotoresistwaferdieImage (on reticle)Image (on wafer)Cell光刻機原理硅片(wafer)單晶硅芯棒直徑可達300mm,長度可達30feet (9m)，重量可達400kg。用金剛石鋸，將芯棒切成薄圓片，即晶片(wafer)。 標準晶片尺寸和厚度為： 100m

5、m (4”) x 500m 150mm (6”) x 750 m 200mm (8”) x 1mm 300mm (12”) x 750m硅片Wafer type: SEMI JEIDADiameter： 8 inch - 200mm 12 inch 300mmNotch：Y/N Flat edge lengthClearance Round FlatSEMI = Semiconductor Equipment and Materials International JEIDA = Japan Electronic Industries Development Association光刻機重要評

6、價指標v CD Line width（線寬）v Overlay（套刻精度）v Field size（場尺寸）v Throughput（生產(chǎn)率）XYWphCD = Critical Dimension光刻機重要設(shè)計指標Numerical Apertureof Projection Lens0.750.50Litho. Resolution (Lines/Spaces)100nmImage Size22mm8mmMagnification-0.25Depth of Focus0.60m (130nm resolution)0.50m (100nm resolution)Projection Len

7、s(-1/4x)ReticleWaferExposure FieldScanScan22x4=882283232x4=1288x4=32XYZNAReticle pattern size88mm128mmExposure field size on wafer (max)22mm 32mmScanning speed (max) reticle stage wafer stage1000mm/s250mm/s* 光刻機光刻機 (汞燈汞燈)光刻機總體結(jié)構(gòu)* 光刻機光刻機 (激光器激光器)光刻機總體結(jié)構(gòu)Step and Scan System193 nm Excimer Laser SourceC

8、omputer ConsoleExposure Column(Lens)WaferReticle (Mask)光刻機總體結(jié)構(gòu)自動對準系統(tǒng)投影物鏡系統(tǒng)框架減振系統(tǒng)掩模傳輸系統(tǒng)調(diào)平調(diào)焦測量系統(tǒng)照明系統(tǒng)工件臺系統(tǒng)掩模臺系統(tǒng)硅片傳輸系統(tǒng)環(huán)境控制系統(tǒng)整機控制系統(tǒng)整機軟件系統(tǒng)光刻機結(jié)構(gòu)及工作原理 曝光系統(tǒng) (照明系統(tǒng)和投影物鏡) 工件臺掩模臺系統(tǒng) 自動對準系統(tǒng) 調(diào)焦調(diào)平測量系統(tǒng) 掩模傳輸系統(tǒng) 硅片傳輸系統(tǒng) 環(huán)境控制系統(tǒng) 整機框架及減振系統(tǒng) 整機控制系統(tǒng) 整機軟件系統(tǒng)光刻機結(jié)構(gòu)：曝光系統(tǒng)* 曝光系統(tǒng)曝光系統(tǒng)激光器激光器/汞燈汞燈提供光源照明系統(tǒng)照明系統(tǒng) 均勻照明掩模投影物鏡投影物鏡 高分辨率成像光刻機結(jié)構(gòu)：

9、曝光系統(tǒng)* 曝光系統(tǒng)總體結(jié)構(gòu)曝光系統(tǒng)總體結(jié)構(gòu)光刻機結(jié)構(gòu)：曝光系統(tǒng)* 曝光系統(tǒng)工作原理曝光系統(tǒng)工作原理M ovable lensesLight trapBS3Energy Detection UnitL4CaF2 rodPhotodiodeD O E2L5CaF2 rodVariableslitIllum ination Lens GroupCollim ator lensM 10Condensor lensFilter (or w indow )ReticleFixed lens groupsLens Z1Lens Z2Lens Z3Lens X -YLast plateN A (variab

10、le)Fixed lens groupsW aferSpot energy sensorLens im age sensor(LIS)O ptical A rrangem ent of Exposure SystemProjectionLensBeam Uniform izerBeam DeliveryFilterArF Excim er LaserSafety shutterBeam ExpanderM 1CL1 CL2L1M 2M 3M 4M 5M 6M 7BS1M 8M 9BS2Beam Steering UnitBeam Sam pling UnitL2L3Variable Atten

11、uatorLight trapPSD 1PSD 2D O E1ZoomexpanderBeam ShaperM ovable axiconFixed axiconFixed lenses光刻機結(jié)構(gòu)：曝光系統(tǒng)* 曝光系統(tǒng)結(jié)構(gòu)曝光系統(tǒng)結(jié)構(gòu)1光刻機結(jié)構(gòu)：曝光系統(tǒng)* 曝光系統(tǒng)結(jié)構(gòu)曝光系統(tǒng)結(jié)構(gòu)2光刻機結(jié)構(gòu)：曝光系統(tǒng)* 曝光波長曝光波長汞燈：汞燈：g-Line (453 nm)、h-Line (405 nm)、i-Line (365 nm)準分子激光器：準分子激光器：KrF (248 nm)、ArF (193 nm)、F2 (157 nm)極紫外光源：極紫外光源：EUV (13 nm)曝光波長影響曝光波長

12、影響光源技術(shù)：光源技術(shù)：中心波長、光譜帶寬、輸出功率光學系統(tǒng)：光學系統(tǒng)：光學設(shè)計、光學材料、光學鍍膜光刻工藝：光刻工藝：光刻膠、工藝參數(shù)光刻機結(jié)構(gòu)原理：曝光系統(tǒng)* 汞燈光源汞燈光源光刻機結(jié)構(gòu)：曝光系統(tǒng)* 激光器激光器中心波長193.365 nm波長帶寬0.3 pm脈沖頻率4000 Hz脈沖能量5 mJ輸出功率20 W光刻機結(jié)構(gòu)：曝光系統(tǒng)* 離軸照明光刻機結(jié)構(gòu)：曝光系統(tǒng)頂部模塊 (Top Modular)光刻機結(jié)構(gòu)：曝光系統(tǒng)* 刀口狹縫Slit光刻機結(jié)構(gòu)：曝光系統(tǒng)* 投影物鏡典型的投影物鏡： - 30 塊鏡片 - 60 個光學表面 - 0.8m 最大直徑 - 500kg 重量wafer vvvv

13、vvvObjective lens reticle Condenserlens Light sourceAperturestop光刻機工作原理：成像原理Imaging Principle: Optical ProjectionImaging Principle: Fourier OpticsobjectNA = n sin iNumerical ApertureProjection LensEntrance PupilNA = Numerical Aperture = Angular Measure of Lens Size = max. Acceptance angle (at object

14、)i = max. acceptance angle (at image)(wafer)(reticle)ImageDefinition of Numerical Aperture (NA)Diffractionintensityposition0 order-1 order+1 order0+1-1-2+20+1-1-2+2+3-3sin =nlpitchIllumination of a Periodic Gratingn = order #n = 0n = -/+1n = -/+3Diffraction Ordersn = 0n = 1n = 3Reticle levelWafer le

15、velDC biasResist Zero and +1st order waveformZero and 3rd order waveformDiffraction OrdersZero order waveformAssembled imageDiffracted ImageEntrancepupil ofthe lens-10 +1-3+3Recombination of OrdersA grating diffracts the light in orders.The orders contain information about the pattern on the grating

16、.A lens can recombine the orders to form an image of the wafer.-5-7+7+5sum+First orderThird order Recombination of OrdersZero orderRecombination of OrdersImagePerfect Imagesum of the ordersAmplitudeAmplitude WaferFourier Coefficients-0.4-0.200.20.40.60.8012345678910AmplitudeOrder number-0.4-0.200.20

17、.40.60.8012345678910Order numberAmplitude-3 -1 0 +1 +3-1 0 +1 -3 +3-0.4-0.200.20.40.60.8012345678910AmplitudeOrder numberZero orderCriterion to Form an ImageOnly the zero order is not enough to form an image. (there is only a “DC level”)There must be at least two orders captured by the lens.This is

18、also known as Abbe theorem. Perfect Imagesum of the ordersDiffraction in & Recombination of OrdersThe grating (mask) transverse the light into orders.The lens captures these orders to form an image.-1+10-3+3Depth of Focus (1)Image in focus.Depth of Focus (DOF): the area near the focus plane wher

19、e the orders are near enough to give constructive interference.Assembled imageDiffracted ImageEntrancepupil ofthe lens-10 +1-3+3Depth of Focus (2)-1th Order+1th Order0th OrderDOFDOFLong wavelengthShort wavelengthResolution: The smallest printable linesNA+10-1Resolution: Coherent IlluminationRNo imag

20、ing!+1 0-1+1 0 -1sin =nlpitchpitch = lsin R = klNALithography resolution & depth of focus光刻機原理：分辨率光刻分辨率影響因素曝光波長曝光波長 l l數(shù)值孔徑數(shù)值孔徑 NA工藝系數(shù)工藝系數(shù) k1R = k1lNA照明光源（減小波長l)SourceWavelength (nm)CDHg-Xe lampe-line (546 nm)g-line (436 nm)for 0.6-0.7 um line widthh-line (405 nm)i-line (365 nm)for 0.5 um and 0.

21、35 umKrF excimer laser248nmfor 0.25 um and 0.18 umArF excimer laser193nmfor 0.13 um and 0.10 umF2 laser157nmfor sub-0.10 umi-lineh-lineg-linee-line浸液式光刻（提高NA)數(shù)值孔徑浸液技術(shù)lsin1nNANAKCD分辨率增強技術(shù)RET = Resolution Enhancement Technique = 分辨率增強技術(shù)分辨率增強技術(shù) 離軸照明 (方向）相移掩模 (相位)光學校正 (強度)R = k1lNA照明與掩模傳統(tǒng)照明環(huán)形照明二極照明四極照明二

22、元掩模移相掩模光學校正Partial Coherent IlluminationOptical projection in Lithographywafer vvvvvvvObjective lens reticle Light sourcevCondenser lens Aperture stops s = partial coherence factor = effective source filling factor in the projection optics pupilBeyond the Resolution LimitNo imagingImaging!ss = fract

23、ion of pupil that is filled with zeroth orderNACoherentPartial Coherence+1 0-1+1 0 -1 +1 0 -1+1 0 -1, sBF-0.1BF+0.1BF+0.2Best FocusBF-0.2120nmBest Focus110nm120nm and 110nm Dense Lines using Binary Maskwafer-2 order-1 order+2 order+1 order0 orderreticlelenswafer-2 order-1 order+2 order+1 order0 orde

24、rreticlelenswafer-2 order-1 order+2 order+1 order0 orderreticlelensConventional Illuminationresolution limitsLinewidth = 90nm Linewidth = 65nm Linewidth = 45nmIlluminatorso u tsi ns同軸照明離軸照明Introduction to MaskMask components普通鉻掩模移相掩模移相掩模 (PSM, Phase Shifting Mask)光學臨近效應校正OPCOPC種類Mask版圖設(shè)計設(shè)計目標版圖OPC后版圖實際掩模曝光圖形