微納加工技術(shù)發(fā)展概述

1、微納加工技術(shù)原理,第一章 微納加工技術(shù)發(fā)展概述,主要內(nèi)容,1.1,1.2,1.3,本課程的主要內(nèi)容,集成電路的發(fā)展,MEMS技術(shù)簡(jiǎn)介,1.4,蘇州納米區(qū)簡(jiǎn)介,1.1 課程的主要內(nèi)容,第一章 微納加工技術(shù)發(fā)展概述 第二章 CMOS工藝流程 第三章 潔凈室、晶圓片清洗與吸雜處理 第四章 光刻 第五章 薄膜淀積 第六章 刻蝕 第七章 熱氧化和Si-SiO2界面 第八章 離子注入 第九章 擴(kuò)散（已學(xué)） 第十章 后端工藝 第十一章 未來(lái)趨勢(shì)與挑戰(zhàn),教材,作者：唐天同，王兆宏,西安交通大學(xué),電子工業(yè)出版社，2010,教材,美) James D. Plummer, Michael D. Deal, Pete

2、r B. Griffin 著, 2005，電子工業(yè)出版社,分?jǐn)?shù)比例,作業(yè) 15% 考勤 15% 實(shí)驗(yàn) 20% 考試 50,1.2 集成電路工藝的發(fā)展,1.2.2 促成集成電路產(chǎn)生的幾項(xiàng)關(guān)鍵發(fā)明,1.2.3 半導(dǎo)體器件,1.2.1 集成電路工藝的發(fā)展歷程,1959 and 1990 integrated circuits. Progress due to: - Feature size (特征尺寸) reduction 13% years (Moores Law). - Increasing chip size (芯片尺寸) 16% per year,1.2.1 集成電路工藝的發(fā)展歷程,Evol

3、ution of Integrated Circuits Fabrication,特征尺寸：工藝制造中晶圓片表面能刻印出圖形的最小尺寸,On April 19, 1965 Electronics Magazine published a paper by Gordon Moore in which he made a prediction about the semiconductor industry that has become the stuff of legend. “The number of transistors incorporated in a chip will appr

4、oximately double every 24 months.” Known as Moores Law, his prediction has enabled widespread proliferation of technology worldwide, and today has become shorthand for rapid technological change,Moores Law,10億,Gordon Moore：Intel 創(chuàng)始人,http:/,The era of “easy” scaling is over. We are now in a period wh

5、ere technology and device innovations are required. Beyond 2020, new currently unknown inventions will be required,IC最小特征尺寸的發(fā)展歷史及規(guī)劃,Device Scaling Over Time,1990 IBM demo of scale “l(fā)ithography”. Technology appears to be capable of making structures much smaller than currently known device limits,ITR

6、S at http:/,ITRS硅技術(shù)發(fā)展規(guī)劃,ITRS International Technology Roadmap for Semiconductors http:/ 預(yù)言硅主導(dǎo)的IC技術(shù)藍(lán)圖,由歐洲電子器件制造協(xié)會(huì)（EECA）、歐洲半導(dǎo)體工業(yè)協(xié)會(huì)（ESIA）、日本電子和信息技術(shù)工業(yè)協(xié)會(huì)（JEITA）、韓國(guó)半導(dǎo)體工業(yè)協(xié)會(huì)（KSIA）、臺(tái)灣半導(dǎo)體工業(yè)協(xié)會(huì)（TSIA）和半導(dǎo)體工業(yè)協(xié)會(huì)（SIA）合作完成,器件尺寸下降，芯片尺寸增加 互連層數(shù)增加 掩膜版數(shù)量增加 工作電壓下降,http:/,Advantages and Challenges Associated with the Introd

7、uction of 450mm Wafers :Aposition paper report submitted by the ITRS Starting Materials Sub-TWG, June 2005. http:/,Linewidth vs. Fab Cost,1.2.2 促成集成電路產(chǎn)生的幾項(xiàng)關(guān)鍵發(fā)明,Invention of the bipolar transistor (點(diǎn)接觸晶體管)- 1947, Bell Labs,W. Shockley,J. Bardeen,W. Brattain,1956年諾貝爾物理獎(jiǎng),點(diǎn)接觸晶體管：基片是N型鍺，發(fā)射極和集電極是兩根金屬絲。這兩根

8、金屬絲尖端很細(xì)，靠得很近地壓在基片上。金屬絲間的距離：50m,1948年 W. Shockley 提出結(jié)型晶體管概念,1950年 第一只NPN結(jié)型晶體管,Grown junction transistor technology （生長(zhǎng)結(jié)技術(shù)）of the 1950s,結(jié)型晶體管的制備,Ge,Alloy junction technology （合金結(jié)技術(shù)）of the 1950s,Double diffused transistor technology (氣相源擴(kuò)散工藝，1956福勒和賴(lài)斯) in 1957，Bell Labs,PN結(jié)裸露在外面,加熱,Ge,高溫爐,Si腐蝕形成臺(tái)面結(jié)構(gòu),19

9、55年，IBM 608，3000多個(gè)鍺晶體管，重約1090kg,第一個(gè)商用晶體管計(jì)算機(jī),1958年JackKilby發(fā)明的世界上第一塊基于鍺的集成電路，德州儀器,相移振蕩器簡(jiǎn)易集成電路,專(zhuān)利號(hào)：No. 31838743，批準(zhǔn)時(shí)間1964.6.26,The planar process (Hoerni - Fairchild 仙童公司, late 1950s,First “passivated (鈍化)” junctions,平面工藝 planar process,平面工藝,二氧化硅屏蔽的擴(kuò)散技術(shù),光刻技術(shù),Jean Hoerni,Basic lithography process,Apply

10、photoresist Patterned exposure Remove photoresist regions,Etch wafer Strip remaining photoresist,光刻 Photolithography,Robert Noyce與他發(fā)明的集成電路,專(zhuān)利號(hào)：No.2981877，批準(zhǔn)時(shí)間1961.4.26,簡(jiǎn)短回顧：一項(xiàng)基于科學(xué)的偉大發(fā)明,Bardeen, Brattain, Shockley, First Ge-based bipolar transistor invented 1947, Bell Labs. Nobel prize Kilby (TI) & N

11、oyce (Fairchild), Invention of integrated circuits 1959, Nobel prize Atalla, First Si-based MOSFET invented 1960, Bell Labs. Planar technology, Jean Hoerni, 1960, Fairchild First CMOS circuit invented 1963, Fairchild “Moores law” coined 1965, Fairchild Dennard, scaling rule presented 1974, IBM First

12、 Si technology roadmap published 1994, USA,基本器件,BJT：模擬電路及高速驅(qū)動(dòng),MOS器件：高密度、更低功耗、更大的設(shè)計(jì)靈活性 NMOS, PMOS, CMOS,20世紀(jì)70年代,1.2.3 半導(dǎo)體器件,PN結(jié),BJT,MOS: 金屬-氧化物-半導(dǎo)體,NMOS,柵極：開(kāi)關(guān)作用，取決于電壓大小,N+：提供電子，提高開(kāi)關(guān)時(shí)間,絕緣層防止Na+、K+干擾,溝道為P型,n,n,p,p,G端為高電平時(shí)導(dǎo)通,G端為低電平時(shí)導(dǎo)通,反向器,輸入：高電平，相當(dāng)于1，輸出0,輸入：低電平，相當(dāng)于0，輸出1,沒(méi)有形成回路，功耗低,CMOS,CMOS (Complement

13、ary Metal Oxide Semiconductor) : PMOS管和NMOS管互補(bǔ)共同構(gòu)成的MOS集成電路,Metal Planarization required for multiple metal layers,Metal Deposition Patterning Fill Dielectric Planarization Contact vias Contact Deposition,Multiple Metal Layers,ICs are widely regarded as one of the key components of the information ag

14、e. Basic inventions between 1945 and 1970 laid the foundation for todays silicon industry. For more than 40 years, Moores Law (a doubling of chip complexity every 2-3 years) has held true. CMOS has become the dominant circuit technology because of its low DCpower on sumption, high performance and fl

15、exible design options. Futureprojections suggest these trends will continue at least 15 more years. Silicon technology has become a basic “toolset” for many areas of science andengineering. Computer simulation tools have been widely used for device, circuit and system design for many years. CAD tool

16、s are now being used for technology design. Chapter 1 also contains some review information on semiconductor materials semiconductor devices. These topics will be useful in later chapters of the text,Summary of Key Ideas,Richard Feynman,1959,Theres Plenty of Room at the Bottom,35,一根頭發(fā) =100微米=100000納

17、米,1.3 MEMS技術(shù)簡(jiǎn)介,MEMS系統(tǒng)的定義,MICRO-ELECTRO-MECHANICAL SYSTEMS，集物理、化學(xué)和生物的傳感器、執(zhí)行器與信息處理和存儲(chǔ)為一體的微型集成系統(tǒng),36,Tai, Fan & Muller,1970,1980,HNA 1960,EDP,Pressure Sensor (Honeywell) Anodic Bonding,KOH,Si Pressure Sensor (Motorola,MEMS的歷史 Si as a mechanical material (Petersen,SFB TMAH 1990,Thermo-pneumatic valve (Re

18、dwood) SFB Pressure Sensor (NovaSensor) DRIE,XeF2/BrF3 2,000,process (US Patent) 1950,RGT (Nathanson et al,Metal Light Valve (RCA,ADXLAccelerometer PolySi Micromotor IR imager (Honeywell) PolySi Comb Drive (Tang, Howe,LIGA PolySi beams (Howe, Muller,BJT Transistor Metal sacrificial,IC,Optical MEMS R

19、F MEMS Si Gyro (Draper) DMD (TI,Bio MEMS,37,1987 1987 1987 1987,Berkeley: Micromotor 戴聿昌 MEMS becomes the name in U.S. Analog Devices begins accelerometer project First MEMS Conference, IEEE MEMS,First Eurosensors conference, Europe The motors stimulating major interest in WORLD,1987年，MEMS的里程碑,38,19

20、94年，DRIE技術(shù)問(wèn)世,1994 DRIE專(zhuān)利申請(qǐng) MEMS進(jìn)入體硅加工時(shí)代,39,MEMS的產(chǎn)學(xué)研圖譜,40,全球汽車(chē)MEMS傳感器的銷(xiāo)售額將在2012年增長(zhǎng)16%，達(dá)到23.1億美元,燈光調(diào)節(jié)，剎車(chē)系統(tǒng),汽車(chē)上的MEMS加速度計(jì),一輛高端的汽車(chē)會(huì)有上百個(gè)傳感器，包括3050個(gè)MEMS傳感器。 安全氣囊 高g值加速度計(jì)，約80%汽車(chē) 側(cè)翻保護(hù) 低g值加速度計(jì) 車(chē)輛動(dòng)態(tài)控制（ESP） 低g值加速度計(jì)、陀螺儀和組合 慣性模塊用于車(chē)身電子穩(wěn)定系統(tǒng) TPMS輪胎壓力實(shí)時(shí)監(jiān)視系統(tǒng) 發(fā)動(dòng)機(jī)機(jī)油壓力傳感器 剎車(chē)系統(tǒng)空氣壓力傳感器 發(fā)動(dòng)機(jī)進(jìn)氣歧管壓力傳感器,柴油機(jī)共軌壓力傳感器,不同汽車(chē)種類(lèi)的MEMS需求,加速度計(jì)和陀螺儀的應(yīng)用分布,美新 趙陽(yáng),手機(jī)和平板電腦中的運(yùn)動(dòng)傳感器將是未來(lái)5年內(nèi)熱門(mén)技術(shù)中的熱門(mén),蘋(píng)果引爆MEMS傳感器應(yīng)用熱潮 融合IMU擴(kuò)大應(yīng)用領(lǐng)域,智能手機(jī)中的MEMS器件,智能手機(jī)中的MEMS加速度計(jì) 導(dǎo)航 自由落體檢測(cè) 傾斜控制 計(jì)步器 手勢(shì)檢測(cè) 單擊/雙擊檢測(cè) 畫(huà)面翻轉(zhuǎn) 圖像防抖,影