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文檔簡介
半導(dǎo)體光電子學(xué)的新進展
RecentProgressonSemiconductorBased
Opto-electronicDevices羅毅YiLUO集成光電子國家重點實驗室清華大學(xué)
電子工程系StateKeyLabonIntegratedOptoelectronicsDept.ofElectronicEngineering,TsinghuaUniversity2025/5/251BackgroundTheDemandforMoreBandwidth Internet,multimediacommunications,andetcMethodstoIncreaseSystemCapacity WDM(Wavelength-DivisionMultiplexing) OTDM(OpticalTime-DivisionMultiplexing)BenefitsofWDMtechniques FlexibilityandscalabilityforavarietyofnetworkarchitecturesWDMtechniquesarethebackboneofmodernopticalfibernetworks2025/5/252StateKeyLabonIntegratedOptoelectronics2025/5/253StateKeyLabonIntegratedOptoelectronics2025/5/254StateKeyLabonIntegratedOptoelectronicsKeyDevicesforWDMOpticalFiberNetworkSystemsLightSourcesLow-costuncooledLDsDirectlymodulatedLDsModulatorintegratedDFBLDsWavelengthtunable/selectableLDsHigh-SpeedPhotodetectorsSOAandWavelengthConverterAWGandRelated2025/5/255StateKeyLabonIntegratedOptoelectronics2025/5/256StateKeyLabonIntegratedOptoelectronicsLow-CostUncooledLDsApplicationsAccessnetworkMetropolitantransmissionBitrate:155MB/s(FP-LDs)~10Gb/s(DFB-LDs)Requirements
WidetemperaturerangeoperationCost-effectivestructurefordevicefabricationHighefficiencyandlargetoleranceforcouplingoutputlightintoasinglemodefiber2025/5/257StateKeyLabonIntegratedOptoelectronicsUncooledGain-CoupledDFBLDsStablesinglemodeoperationfrom-40to85C
Integratedbeam-expanderforimprovedcouplingtoleranceGain-coupledDFBlaserswithcurrent-blockinggratings2025/5/258StateKeyLabonIntegratedOptoelectronicsDirectlyModulatedDFBLDsApplicationsGigabitEthernetMetropolitantransmissionBitrate:upto10Gb/sWavelength:1.3m&1.55mLimitationsLimitedtransmissionspan(<20km)duetolargelinewidthenhancementfactor(>4)
Modulationspeedislimitedbycarrierrelaxationoscillation2025/5/259StateKeyLabonIntegratedOptoelectronics10Gb/sDirectlyModulatedDFBLDsfor
MetropolitanDataTransmissionSmall-signalRFResponseBERCharacteristics2025/5/2510StateKeyLabonIntegratedOptoelectronicsEAModulatorIntegratedDFBLDsApplicationsTrunklinetransmissionBitrate:2.5Gb/s~40Gb/sAdvantagesCompactsizeLowcouplinglossLowfrequencychirpingReducedcostImprovedreliability2025/5/2511StateKeyLabonIntegratedOptoelectronics10Gb/sEAModulatorIntegratedDFBLDsforTrunkLineCommunicationsTransmissionlength:100kmFeature:Lowpowerpenalty(<1.5dB)&Widebandwidth(~14GHz)2025/5/2512StateKeyLabonIntegratedOptoelectronics10Gb/sEAModulatorIntegratedDFBLDsEyeDiagramBERPerformance2025/5/2513StateKeyLabonIntegratedOptoelectronicsWavelengthTunable/SelectableLDsAdvantagesAbilitytorestorefailedchannelsReducedtransmittercostIncreasedflexibilityforfuturenetworkmanagingWavelengthTunablevs.WavelengthSelectableWavelengthTunableLDs:BasedonDBRstructures
Compactdevicestructure Poorreliability&ElectriccrosstalkathighfrequencyWavelengthSelectableLDs:BasedonDFBLDarrays Relativelycomplicateddevicestructure
Improvedreliabilityandwavelengthstability2025/5/2514StateKeyLabonIntegratedOptoelectronicsMulti-rangeWavelengthSelectableLDsForuseinback-up&add-dropinDWDMphotonicnetworkDFB-LDsintegratedwithMMIcoupler,SOA,andEAmodulatorCompactsize(400m2840m)2025/5/2515StateKeyLabonIntegratedOptoelectronicsMulti-RangeWavelengthSelectableLDArraysforDWDMSystems15nm/chipwavelengthselectablerangeWavelength&ThresholdcurrentLasingSpectra2025/5/2516StateKeyLabonIntegratedOptoelectronicsHigh-SpeedPhotodetectorsConventionalConfigurationsSurfaceilluminatedp-i-nphotodetectorAvalanchephotodetector(APD)Limitations
LimitedbandwidthforAPDdetectorsTrade-offbetweenbandwidthandefficiencyforsurfaceilluminatedp-i-ndetectorsCurrentTrendSideilluminatedstructureWaveguidep-i-nphotodiodes2025/5/2517StateKeyLabonIntegratedOptoelectronicsWidebandWaveguidePhotodiode
for40Gb/sSystemsMonolithicreceivercomposedofmultimodewaveguidep-i-nphotodiodeandaHEMTdistributedampli
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