IC制造流程簡介-文檔資料

1、1IC制造流程簡介ANDY2相關(guān)定義半導(dǎo)體是指導(dǎo)電能力介于導(dǎo)體和非導(dǎo)體之間的材料，其指四價硅中添加三價或五價化學(xué)元素而形成的電子元件，它有方向性可以用來制造邏輯線路使電路具有處理資訊的功能。半導(dǎo)體的傳導(dǎo)率可由攙雜物的濃度來控制：攙雜物的濃度越高，半導(dǎo)體的電阻系數(shù)就越底。P型半導(dǎo)體中的多數(shù)載體是電洞。硼是P型的摻雜物。N型半導(dǎo)體的多數(shù)載體是電子。磷，砷，銻是N型的攙雜物。3相關(guān)定義集成電路是指把特定電路所需的各種電子元件及線路縮小并制作在大小僅及2CM平方或更小的面積上的一種電子產(chǎn)品。4相關(guān)定義集成電路主要種類有兩種：邏輯LOGIC及記憶體MEMORY。前者主要執(zhí)行邏輯的運算如電腦的微處理器后者

2、則如只讀器READ ONLY 及隨機處理器RANDOM ACCESS MEMORY等。集成電路的生產(chǎn)主要分三個階段：硅鏡片WAFER的制造，集成電路的制造及集成電路的包裝PACKAGE5The Outline6製程7The Introduction to The Manufacturing Process of VLSI 8晶圓(Wafer) 晶棒成長 切片(Slicing) 研磨(Lapping) 清洗(Cleaning) 拋光(Polishing) 檢查(Inspection) 9MeltSeedGraphite CrucibleGrowing CrystalNoncontaminatin

3、g LinerThe Czochralski Method - 110(a) As-grown crystal(b) Grind crystal to remove undulations and saw to remove portions in resistive range(c) Saw into slices (with orienting flats ground before sawing) (d) Round edges of slice by grinding(e) Polish sliceCrystal to Wafe11微影(Photolithography)原理：在晶片表

4、面上覆上一層感光材料，來自光源的平行光透過光罩的圖形，使得晶片表面的感光材料進行選擇性的感光。 感光材料：正片經(jīng)過顯影(Development)，材料所獲得的圖案與光罩上相同稱為正片。負(fù)片如果彼此成互補的關(guān)係稱負(fù)片12WaferWaferContact Printto expose resistWaferResistApply resist after priming(spinner)ResistOxideLight sourceProjection printto expose resistorWaferResistOxideProjection lensMaskCondenser lens

5、Next PagePhotolithography Process - 1Mask13ContinueWaferWaferWaferDevelop resistEtch oxideStrip resistDeveloped resist showing patternEtch to match resist patternResist removedPhotolithography Process - 214Doping: To get the extrinsic semiconductor by adding donors or acceptors, which may cause the

6、impurity energy level. The action that adding particular impurities into the semiconductor is called “doping” and the impurity that added is called the “dopant”. Introduction to DopingDoping methods: 1.Diffusion 2.Ion Implantation15Pre-deposition: To put the impurities on the wafer surface.Generally

7、 used dopant resource furnace design: Carrier gasHeaterQuartz tubeSolid dopant source furnaceO2Liquid dopant sourceCarrier gasGas dopant sourceValveO2(a)(c)(b)Diffusion Process - 1Solid dopant source 16Drive-in: To implant the dopant into the wafer by the thermal processQuartz tubeQuartz tubeHeaterW

8、aferGas outReaction roomGas inGas outWaferQuartz boats3-Zone heating element Dopants and gas inProfiling Tc(In the tube)Horizontal TypeDiffusion Precess - 2171. The definition: A manufacturing process that can uniformly implants the ions into the wafer in the specified depth and consistence by selec

9、ting and accelerating ions. 2. The purpose: To change the resistance value of the semiconductor by implanting the dopant.3. Energy range (8 years ago)(1) General process：10 KeV - 180 KeV (0.35m) (100KeV for 0.18 m now)(2) Advanced process：10 KeV - 3 MeV ( 100 C/s Uniform Temperature Changing Low Thermal Budget (to compare with Furnace) To A